FCPF22N60NT The FCPF22N60NT is an N-Channel MOSFET from On Semiconductor with a maximum drain-source voltage of 600V and continuous drain current of 22A. It comes in a TO-220-3 Full Pack (TO-220F) through-hole package.
Mfr Part #:

FCPF22N60NT

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FCPF22N60NT is an N-Channel MOSFET from On Semiconductor with a maximum drain-source voltage of 600V and continuous drain current of 22A. It comes in a TO-220-3 Full Pack (TO-220F) through-hole package.
✓ Total Stock: 2,400 pcs

FCPF22N60NT Available from 2 distributors

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FCPF22N60NT Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FCPF22N60NT Description

Short technical summary and product information.

The FCPF22N60NT is an N-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for high-voltage switching applications and features a maximum drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 22A at case temperature (Tc). The device utilizes MOSFET (Metal Oxide) technology and offers a low on-resistance of 165 mOhm maximum at a gate-source voltage of 10V and drain current of 11A.

 

Key electrical characteristics include a maximum gate charge (Qg) of 45 nC at Vgs = 10V, input capacitance (Ciss) of 1950 pF at Vds = 100V, and a gate threshold voltage (Vgs(th)) of 4V maximum at Id = 250 µA. The maximum gate-source voltage is ±45V, and the recommended drive voltage is 10V. Power dissipation is rated at 39W at case temperature.

 

The FCPF22N60NT is housed in a TO-220-3 Full Pack package (supplier device package TO-220F-3) with through-hole mounting. The operating junction temperature range is -55°C to 150°C. This MOSFET is suitable for power supply circuits, motor control, DC-DC converters, and other high-voltage switching applications.

FCPF22N60NT Quick Information

Product Type: N-Channel MOSFET
Canonical Name: FCPF22N60NT N-Channel MOSFET
Subcategory: N-Channel MOSFET

FCPF22N60NT Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FCPF22N60NT Features

  • N-Channel MOSFET with 600V drain-source rating.
  • Continuous drain current of 22A at Tc.
  • Low on-resistance of 165 mOhm at 11A.
  • Through-hole TO-220F package.
  • Gate threshold voltage of 4V maximum.

FCPF22N60NT Applications

  • Suitable for high-voltage switching applications.
  • Used in power supply circuits.
  • Ideal for motor control systems.
  • Applicable in DC-DC converters.
  • Can be used in inverter designs.

FCPF22N60NT FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FCPF22N60NT?

The maximum drain-source voltage (Vdss) is 600V.

What is the continuous drain current rating?

The continuous drain current is 22A at case temperature (Tc).

What is the on-resistance of the FCPF22N60NT?

The maximum on-resistance is 165 mOhm at Id = 11A and Vgs = 10V.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package does the FCPF22N60NT come in?

It comes in a TO-220-3 Full Pack package (TO-220F-3).

Is the FCPF22N60NT RoHS compliant?

It is listed as RoHS3 Compliant, but this status is unverified.

What is the gate charge of the FCPF22N60NT?

The maximum total gate charge is 45 nC at Vgs = 10V.

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