| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCPF220N80 is an N-Channel enhancement-mode power MOSFET manufactured by On Semiconductor. It features a drain-to-source voltage rating of 800V and a continuous drain current of 23A at case temperature (Tc). The device has a typical gate drive voltage of 10V and a maximum drain-to-source on-resistance of 220mOhm at Id = 11.5A and Vgs = 10V.
For switching performance, the MOSFET has a maximum gate charge of 105 nC at Vgs = 10V and an input capacitance of 4560 pF at Vds = 100V. The gate threshold voltage is rated at a maximum of 4.5V at Id = 2.3mA, and the maximum allowed gate-to-source voltage is ±20V.
The device is housed in a TO-220-3 Full Pack package (TO-220F) with through-hole mounting, suitable for applications requiring high voltage operation and moderate power dissipation up to 44W at case temperature. The junction temperature operating range covers -55°C to 150°C.
The continuous drain current (Id) is rated at 23A at case temperature Tc.
The device is in a TO-220-3 Full Pack package (TO-220F) for through-hole mounting.
The junction temperature (Tj) operating range is -55°C to 150°C.
The RoHS status is listed as 'RoHS3 Compliant' but this information is unverified and should be confirmed with the manufacturer.
The maximum drain-to-source voltage (Vdss) is 800V.
The maximum gate threshold voltage (Vgs(th)) is 4.5V at Id = 2.3mA.
The maximum power dissipation (Pd) is 44W at case temperature Tc.