| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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As part of onsemi's SuperFET family, the FCPF20N60T is an N-Channel power MOSFET built with charge-balance super-junction technology. It provides a maximum drain-to-source voltage rating of 600V and a continuous drain current rating of 20A at 25°C case temperature. The maximum on-resistance is 190mOhm at a 10V gate drive, and the gate charge is limited to 98nC, supporting efficient switching in high-voltage circuits.
This MOSFET is designed for switching power applications and is suitable for AC-DC power supplies, solar inverters, PFC stages, and server or telecom power systems. The device has a maximum input capacitance of 3080pF at 25V and a maximum power dissipation of 39W at case temperature.
The FCPF20N60T is supplied in a through-hole TO-220-3 Full Pack package, with a supplier device package designation of TO-220F-3. It operates over a junction temperature range of -55°C to 150°C.
The FCPF20N60T comes in a through-hole TO-220-3 Full Pack package, also designated as TO-220F-3.
The junction temperature range is -55°C to 150°C.
The part is listed as RoHS3 compliant, but this status has not been independently verified.
The maximum drain-to-source voltage (Vdss) is 600V.
The maximum continuous drain current is 20A at a case temperature of 25°C.
Maximum on-resistance is 190mOhm at a drain current of 10A and gate-source voltage of 10V.
Maximum gate charge is 98nC at a gate-source voltage of 10V.