| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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838 pcs
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838 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FCPF190N65S3R0L is an N-Channel power MOSFET from On Semiconductor's SUPERFET III Easy Drive series, utilizing charge balance technology for low on-resistance and reduced gate charge. Key electrical ratings include a maximum drain-source voltage of 650V (700V at TJ=150°C), continuous drain current of 17A at TC=25°C, and a maximum on-resistance of 190mΩ at VGS=10V with ID=8.5A.
This device features ultra low gate charge (typical 33nC) and low effective output capacitance (typical 300pF), contributing to efficient switching performance. It is 100% avalanche tested with a single pulsed avalanche energy rating of 76mJ. The MOSFET can withstand high dv/dt (100 V/ns) and includes peak diode recovery dv/dt capability.
Housed in a through-hole TO-220-3 Full Pack (TO-220F-3) package, the device is designed for easy mounting and thermal management. Typical applications include computing and display power supplies, telecom and server power supplies, industrial power supplies, as well as lighting, charger, and adapter circuits.
Maximum drain-source voltage is 650V, with 700V at junction temperature of 150°C.
Through-hole TO-220-3 Full Pack (TO-220F-3) package.
-55°C to 150°C junction temperature.
Yes, the datasheet indicates it is RoHS compliant and Pb-Free.
190mΩ at 8.5A drain current and 10V gate-source voltage, with typical 159mΩ.
Maximum gate charge is 33nC at 10V gate-source voltage.
Single pulsed avalanche energy is 76mJ at 2.5A avalanche current.