| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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134 pcs
|
134 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FCPF190N65S3L1 is an N-Channel power MOSFET from ON Semiconductor's SUPERFET III Easy Drive family. It utilizes charge balance super-junction technology to achieve low on-resistance and low gate charge, enabling efficient switching in high-voltage applications.
Key specifications include a maximum drain-source voltage of 650V, continuous drain current of 14A at Tc=25°C, and a maximum on-resistance of 190mΩ at Vgs=10V. The device features ultra low gate charge (typical 30nC) and low effective output capacitance (typical 277pF), which contribute to reduced switching losses and improved EMI performance. It is 100% avalanche tested and rated for single-pulse avalanche energy of 76mJ.
The MOSFET is housed in a TO-220-3 Full Pack (TO-220F-3) through-hole package, offering robust thermal performance with a junction-to-case thermal resistance of 3.76°C/W. It is Pb-Free and RoHS compliant, suitable for environmentally conscious designs.
Typical applications include computing and display power supplies, telecom and server power supplies, industrial power supplies, and lighting/charger/adapter circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.89 | $1.89 |
| 10+ | $1.70 | $1.70 |
| 100+ | $1.36 | $1.36 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
TO-220-3 Full Pack (TO-220F-3).
-55°C to 150°C junction temperature.
Yes, RoHS3 compliant and Pb-Free.
30 nC at Vgs=10V.
14A continuous at Tc=25°C, 35A pulsed.
190mΩ max at Vgs=10V, Id=7A; typical 165mΩ.