FCPF190N65FL1-F154 N-Channel MOSFET with 650V drain-source voltage and 20.6A continuous drain current. Housed in a TO-220F-3 through-hole package.
Mfr Part #:

FCPF190N65FL1-F154

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 650V drain-source voltage and 20.6A continuous drain current. Housed in a TO-220F-3 through-hole package.
✓ Total Stock: 16,390 pcs

FCPF190N65FL1-F154 Available from 1 distributor

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FCPF190N65FL1-F154 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FCPF190N65FL1-F154 Description

Short technical summary and product information.

The FCPF190N65FL1-F154 is an N-Channel MOSFET from ON Semiconductor, designed for high-voltage switching applications. It features a maximum drain-source voltage of 650V and a continuous drain current of 20.6A at case temperature. The device offers a low on-resistance of 190 mOhm at 10V gate drive, with a gate charge of 78 nC and input capacitance of 3055 pF, enabling efficient switching performance.

 

This MOSFET is housed in a TO-220-3 Full Pack (TO-220F-3) through-hole package, suitable for easy mounting on PCBs. It operates over a junction temperature range of -55°C to 150°C and can dissipate up to 39W. The gate threshold voltage is 5V at 2mA, and the maximum gate-source voltage is ±20V.

 

Typical applications include power supplies, inverters, motor drives, and other circuits requiring high-voltage switching. The through-hole package allows for robust mechanical attachment and thermal management. The device is claimed to be RoHS3 compliant, REACH unaffected, and has an MSL level of 1 (unlimited).

FCPF190N65FL1-F154 Quick Information

Product Type: MOSFET
Canonical Name: FCPF190N65FL1-F154 N-Channel MOSFET
Subcategory: N-Channel MOSFET

FCPF190N65FL1-F154 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FCPF190N65FL1-F154 Features

  • N-Channel MOSFET with 650V drain-source voltage.
  • 20.6A continuous drain current rating.
  • Low on-resistance of 190 mOhm at 10V.
  • TO-220F-3 through-hole package.
  • Operating temperature range -55°C to 150°C.

FCPF190N65FL1-F154 Applications

  • Suitable for high-voltage switching power supplies.
  • Used in AC-DC converters and PFC circuits.
  • Ideal for motor control and inverter systems.
  • Applicable in lighting and industrial drives.

FCPF190N65FL1-F154 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FCPF190N65FL1-F154?

The maximum drain-source voltage is 650V.

What package does the FCPF190N65FL1-F154 come in?

It comes in a TO-220-3 Full Pack (TO-220F-3) through-hole package.

What is the operating temperature range of this MOSFET?

The operating junction temperature range is -55°C to 150°C.

Is the FCPF190N65FL1-F154 RoHS compliant?

Yes, it is listed as RoHS3 compliant (unverified).

What is the maximum drain current of the FCPF190N65FL1-F154?

The maximum continuous drain current is 20.6A at case temperature.

What is the typical gate charge of this MOSFET?

The maximum gate charge is 78 nC at 10V gate-source voltage.

What is the on-resistance of the FCPF190N65FL1-F154?

The maximum on-resistance is 190 mOhm at 10A drain current and 10V gate drive.

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