| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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16,390 pcs
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16390 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FCPF190N65FL1-F154 is an N-Channel MOSFET from ON Semiconductor, designed for high-voltage switching applications. It features a maximum drain-source voltage of 650V and a continuous drain current of 20.6A at case temperature. The device offers a low on-resistance of 190 mOhm at 10V gate drive, with a gate charge of 78 nC and input capacitance of 3055 pF, enabling efficient switching performance.
This MOSFET is housed in a TO-220-3 Full Pack (TO-220F-3) through-hole package, suitable for easy mounting on PCBs. It operates over a junction temperature range of -55°C to 150°C and can dissipate up to 39W. The gate threshold voltage is 5V at 2mA, and the maximum gate-source voltage is ±20V.
Typical applications include power supplies, inverters, motor drives, and other circuits requiring high-voltage switching. The through-hole package allows for robust mechanical attachment and thermal management. The device is claimed to be RoHS3 compliant, REACH unaffected, and has an MSL level of 1 (unlimited).
The maximum drain-source voltage is 650V.
It comes in a TO-220-3 Full Pack (TO-220F-3) through-hole package.
The operating junction temperature range is -55°C to 150°C.
Yes, it is listed as RoHS3 compliant (unverified).
The maximum continuous drain current is 20.6A at case temperature.
The maximum gate charge is 78 nC at 10V gate-source voltage.
The maximum on-resistance is 190 mOhm at 10A drain current and 10V gate drive.