| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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16,390 pcs
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16390 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCPF190N65FL1 is an N-Channel enhancement mode MOSFET designed for high-efficiency power switching applications. It features a drain-to-source voltage rating of 650 V and a continuous drain current of 20.6 A at a case temperature (Tc). The device is built with MOSFET (Metal Oxide) technology and offers a maximum on-resistance of 190 mOhm at 10 A gate drive and 10 V gate-to-source voltage.\n\nKey electrical characteristics include a typical input capacitance of 3055 pF at 100 V drain-to-source and a maximum gate charge of 78 nC at 10 V gate voltage. The gate threshold voltage is rated up to 5 V at 250 µA drain current. These parameters make the FCPF190N65FL1 suitable for switching converters, power factor correction, and other industrial power management systems.\n\nThe device is supplied in a through-hole TO-220-3 Full Pack (TO-220F-3) package, which provides robust thermal performance. It can operate over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 39 W at Tc. The part is claimed RoHS3 compliant, though this has not been externally verified.
The drain-to-source voltage (Vdss) is 650 V.
The continuous drain current is 20.6 A at case temperature (Tc).
The operating junction temperature range is -55°C to 150°C.
It comes in a TO-220-3 Full Pack (also known as TO-220F-3) through-hole package.
The part is listed as RoHS3 Compliant, but this status is unverified.
The maximum drain-to-source on-resistance is 190 mOhm at 10 A drain current and 10 V gate drive.
Maximum power dissipation is 39 W at case temperature (Tc).