FCPF190N65FL1 The FCPF190N65FL1 is a 650V, 20.6A N-Channel MOSFET by On Semiconductor. Housed in a TO-220-3 Full Pack package.
Mfr Part #:

FCPF190N65FL1

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FCPF190N65FL1 is a 650V, 20.6A N-Channel MOSFET by On Semiconductor. Housed in a TO-220-3 Full Pack package.
✓ Total Stock: 16,390 pcs

FCPF190N65FL1 Available from 1 distributor

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FCPF190N65FL1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FCPF190N65FL1 Description

Short technical summary and product information.

The FCPF190N65FL1 is an N-Channel enhancement mode MOSFET designed for high-efficiency power switching applications. It features a drain-to-source voltage rating of 650 V and a continuous drain current of 20.6 A at a case temperature (Tc). The device is built with MOSFET (Metal Oxide) technology and offers a maximum on-resistance of 190 mOhm at 10 A gate drive and 10 V gate-to-source voltage.\n\nKey electrical characteristics include a typical input capacitance of 3055 pF at 100 V drain-to-source and a maximum gate charge of 78 nC at 10 V gate voltage. The gate threshold voltage is rated up to 5 V at 250 µA drain current. These parameters make the FCPF190N65FL1 suitable for switching converters, power factor correction, and other industrial power management systems.\n\nThe device is supplied in a through-hole TO-220-3 Full Pack (TO-220F-3) package, which provides robust thermal performance. It can operate over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 39 W at Tc. The part is claimed RoHS3 compliant, though this has not been externally verified.

FCPF190N65FL1 Quick Information

Product Type: Single MOSFET
Series: FCPF
Canonical Name: N-Channel 650V 20.6A MOSFET in TO-220-3 Full Pack
Subcategory: N-Channel MOSFET

FCPF190N65FL1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FCPF190N65FL1 Features

  • 650V drain to source voltage rating.
  • 20.6A continuous drain current.
  • 190mOhm maximum on-resistance.
  • Through-hole TO-220F-3 package.
  • Wide -55°C to 150°C temperature range.

FCPF190N65FL1 Applications

  • Suitable for power supply switching circuits.
  • Used in motor control and inverter systems.
  • Ideal for power factor correction stages.

FCPF190N65FL1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the FCPF190N65FL1?

The drain-to-source voltage (Vdss) is 650 V.

What is the maximum continuous drain current?

The continuous drain current is 20.6 A at case temperature (Tc).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package does the FCPF190N65FL1 come in?

It comes in a TO-220-3 Full Pack (also known as TO-220F-3) through-hole package.

Is the FCPF190N65FL1 RoHS compliant?

The part is listed as RoHS3 Compliant, but this status is unverified.

What is the typical on-resistance?

The maximum drain-to-source on-resistance is 190 mOhm at 10 A drain current and 10 V gate drive.

What is the maximum power dissipation?

Maximum power dissipation is 39 W at case temperature (Tc).

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