| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FCPF190N60E-F154 is an N-Channel power MOSFET from On Semiconductor, designed for high-voltage switching applications. It features a maximum drain-source voltage (Vdss) of 600V, a continuous drain current of 20.6A, and a low on-resistance of 190 mOhm at 10V gate drive. The device is housed in a TO-220-3 Full Pack (TO-220F-3) through-hole package, suitable for PCB mounting with full isolation capability.
Key electrical characteristics include a gate threshold voltage of 3.5V, gate charge of 82 nC at 10V, and input capacitance of 3175 pF at 25V. The operating junction temperature range is -55°C to 150°C, with a maximum power dissipation of 39W. Designed for efficient switching in power supplies, converters, and motor control circuits, this MOSFET combines high voltage capability with moderate current handling in a compact, thermally efficient package.
The part is RoHS3 compliant (unverified) and has a Moisture Sensitivity Level of 1 (unlimited), indicating it is not moisture sensitive. It is manufactured by On Semiconductor, a leading supplier of power management solutions.
600V.
TO-220-3 Full Pack (TO-220F-3) through-hole.
-55°C to 150°C junction temperature.
RoHS3 Compliant (unverified).
20.6A.
82 nC at Vgs=10V.