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FCPF190N60E N-Channel MOSFET with 600V drain-source voltage and 20.6A continuous drain current. Features 190mΩ maximum on-resistance and RoHS compliance.
Mfr Part #:

FCPF190N60E

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 600V drain-source voltage and 20.6A continuous drain current. Features 190mΩ maximum on-resistance and RoHS compliance.
✓ Total Stock: 600 pcs

FCPF190N60E Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
600 pcs
On Request
600 pcs On Request 1 On Request On Request 21+ On Request On Request
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FCPF190N60E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FCPF190N60E Description

Short technical summary and product information.

The FCPF190N60E is a high-voltage super-junction N-Channel MOSFET from onsemi's SUPERFET II Easy-Drive series, designed for efficient power conversion. It offers a maximum drain-source voltage of 600V (650V typical at 150°C junction temperature) and a continuous drain current of 20.6A at 25°C case temperature, derated to 13.1A at 100°C.

 

The device features a low maximum on-resistance of 190mΩ at 10V gate drive and 10A drain current, with a typical value of 160mΩ. Ultra low gate charge (63 nC typical) and low effective output capacitance (178 pF typical) enable high switching efficiency. The MOSFET is 100% avalanche tested and includes an integrated gate resistor for EMI management.

 

Packaged in a TO-220-3 Full Pack (TO-220F-3) through-hole case, it is suitable for applications such as LCD/LED/PDP TV lighting, solar inverters, and AC-DC power supplies. The part is RoHS compliant.

FCPF190N60E Quick Information

Product Type: MOSFET - Single
Series: Easy-Drive
Canonical Name: FCPF190N60E N-Channel MOSFET, 600V, 20.6A, TO-220F
Subcategory: Super Junction MOSFET

FCPF190N60E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FCPF190N60E Features

  • Super-junction technology for low on-resistance.
  • 600V drain-source voltage rating.
  • 20.6A continuous drain current at 25°C.
  • Ultra low gate charge of 63 nC.
  • RoHS compliant and 100% avalanche tested.

FCPF190N60E Applications

  • Used in LCD/LED/PDP TV lighting.
  • Suitable for solar inverter designs.
  • Ideal for AC-DC power supply circuits.
  • Supports high-efficiency switching applications.

FCPF190N60E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vds)?

600 V (650 V typical at junction temperature 150°C).

What is the package type?

Through-hole TO-220-3 Full Pack (TO-220F-3).

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the FCPF190N60E RoHS compliant?

Yes, it is RoHS3 compliant as verified from the datasheet.

What is the maximum on-resistance (Rds(on))?

190 mΩ at 10A, 10V gate drive; typical 160 mΩ.

What is the typical gate charge (Qg)?

63 nC typical, 82 nC maximum at 10V.

What is the continuous drain current rating?

20.6 A at case temperature 25°C, 13.1 A at 100°C.

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