FCPF190N60 N-Channel MOSFET with 600V drain-source voltage, 20.2A continuous current, and 199mΩ maximum on-resistance in a TO-220F-3 package.
Mfr Part #:

FCPF190N60

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 600V drain-source voltage, 20.2A continuous current, and 199mΩ maximum on-resistance in a TO-220F-3 package.
✓ Total Stock: 130,408 pcs
$ Price Range: $1.47 - $3.04

FCPF190N60 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
109,000 pcs
109000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
21,408 pcs
21408 pcs On Request 1 On Request On Request On Request On Request On Request

FCPF190N60 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FCPF190N60 Description

Short technical summary and product information.

The FCPF190N60 is an N-Channel MOSFET from onsemi's SUPERFET II family, utilizing charge balance technology to achieve low on-resistance and reduced gate charge. It is rated for a maximum drain-source voltage of 600V and a continuous drain current of 20.2A at Tc=25°C. The device features a typical drain-source on-resistance of 170mΩ and a maximum of 199mΩ at 10V gate drive.

 

Designed for high-efficiency switching, it offers ultra-low gate charge (typical 57nC) and low effective output capacitance (typical 160pF). The MOSFET is avalanche rated with a single-pulse avalanche energy of 400mJ and is 100% avalanche tested.

 

The device comes in a TO-220F-3 isolated full-pack package, simplifying heat sink mounting. It is suitable for power factor correction, AC-DC power supplies, server/telecom power, and LCD/LED TV power applications. The operating junction temperature range is -55°C to +150°C.

FCPF190N60 Quick Information

Product Type: MOSFET
Canonical Name: FCPF190N60 N-Channel MOSFET
Subcategory: Single N-Channel

FCPF190N60 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FCPF190N60 Estimated Pricing

Qty Low High
1+ $3.04 $3.04
10+ $2.73 $2.73
100+ $2.24 $2.24
500+ $1.91 $1.91
1,000+ $1.60 $1.60
2,000+ $1.53 $1.53
5,000+ $1.47 $1.47

Estimated market price range - modelled values for guidance only, not live distributor offers.

FCPF190N60 Features

  • 600V maximum drain-source voltage
  • 20.2A continuous drain current
  • Ultra-low gate charge of 57 nC
  • Isolated TO-220F-3 package
  • RoHS compliant and 100% avalanche tested

FCPF190N60 Applications

  • Power factor correction circuits
  • AC-DC power supplies
  • Server and telecom power systems
  • LCD and LED TV power supplies

FCPF190N60 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FCPF190N60?

The maximum drain-source voltage is 600 V.

What is the maximum continuous drain current at Tc = 25°C?

The maximum continuous drain current is 20.2 A at Tc = 25°C.

What is the package type for the FCPF190N60?

The device is available in a TO-220-3 Full Pack (TO-220F-3) package in tube packaging.

What is the operating temperature range?

The operating junction temperature ranges from -55°C to +150°C.

Is the FCPF190N60 RoHS compliant?

Yes, it is RoHS compliant.

What is the typical on-resistance?

The typical drain-source on-resistance is 170 mΩ.

What is the gate charge?

Typical gate charge is 57 nC, with a maximum of 74 nC at Vgs = 10 V.

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