| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,781 pcs
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5781 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The FCPF16N60 is a high-voltage N-Channel MOSFET from On Semiconductor's SUPERFET family, utilizing charge balance technology to achieve low on-resistance and gate charge. It is rated for 600V drain-source voltage and 16A continuous drain current, with a maximum on-resistance of 260mΩ at 10V gate drive. Typical on-resistance is 220mΩ, and typical gate charge is 55nC.
Designed for high-efficiency switching applications, the device offers low effective output capacitance (110 pF typical) and 100% avalanche testing with a single-pulsed avalanche energy rating of 450mJ. It operates over a junction temperature range of -55°C to 150°C and is suitable for solar inverters, AC-DC power supplies, PFC circuits, and telecom/industrial power systems.
The MOSFET is housed in a TO-220-3 Full Pack (TO-220F-3) through-hole package, which provides isolation and ease of mounting. The device is Pb-Free and RoHS compliant as per the datasheet.
The drain-source voltage (Vdss) is 600 V.
It comes in a TO-220-3 Full Pack (TO-220F-3) through-hole package.
The operating junction temperature range is -55°C to 150°C.
The datasheet states the device is Pb-Free, indicating RoHS compliance. However, no formal RoHS certificate is available.
The continuous drain current is 16 A at Tc=25°C.
The maximum drain-source on-resistance is 260 mΩ at Id=8A and Vgs=10V.
The maximum gate charge at Vgs=10V is 70 nC; typical is 55 nC.