| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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56 pcs
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56 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FCPF165N65S3R0L is an N-Channel power MOSFET from ON Semiconductor's SUPERFET III Easy Drive family, utilizing charge balance technology for superior performance. It features a maximum drain-source voltage of 650V (700V at TJ=150°C) and continuous drain current of 19A at TC=25°C. The device achieves a typical on-resistance of 140mΩ (max 165mΩ at VGS=10V) and an ultra-low gate charge of 35nC typical, enabling efficient switching in high-frequency applications. The low effective output capacitance (Coss(eff) = 345pF typical) further reduces switching losses. The MOSFET is 100% avalanche tested with a single-pulse avalanche energy rating of 87mJ. It is housed in a through-hole TO-220F-3 fully insulated package, providing easy mounting and heat dissipation. Designed for computing, telecom, server, and industrial power supplies, as well as lighting and charger adapters. The device is Pb-Free and RoHS3 compliant, with an operating junction temperature range of -55°C to 150°C.
650V (700V at junction temperature of 150°C).
TO-220-3 Full Pack (TO-220F-3) through-hole package.
-55°C to 150°C junction temperature.
Yes, RoHS3 compliant and Pb-Free.
140 mΩ typical at VGS=10V; maximum 165 mΩ at ID=9.5A, VGS=10V.
35 nC typical at VGS=10V.