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FCPF13N60NT N-Channel MOSFET designed for high-voltage switching applications. Rated for 600V drain-source voltage and 13A continuous drain current.
Mfr Part #:

FCPF13N60NT

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET designed for high-voltage switching applications. Rated for 600V drain-source voltage and 13A continuous drain current.
✓ Total Stock: 14,249 pcs

FCPF13N60NT Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
13,669 pcs
On Request
13669 pcs On Request 1 On Request On Request 10+ On Request On Request
Flip Electronics ✓
Non-Authorised Inventory information
580 pcs
On Request
580 pcs On Request 1 On Request On Request On Request On Request On Request
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FCPF13N60NT Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FCPF13N60NT Description

Short technical summary and product information.

The FCPF13N60NT is an N-Channel power MOSFET manufactured by On Semiconductor (onsemi). It features a drain-to-source voltage rating of 600V and a continuous drain current of 13A at 25°C case temperature.\n\nThe device has a maximum drain-source on-resistance of 258mOhm at a gate-source voltage of 10V and drain current of 6.5A. The gate threshold voltage is 4V maximum at 250µA drain current. It requires a drive voltage of 10V for optimal Rds(on) performance.\n\nWith a maximum gate charge of 39.5nC and input capacitance of 1765pF, this MOSFET is suitable for medium-frequency switching applications. The operating temperature range is -55°C to 150°C.\n\nHoused in a through-hole TO-220-3 Full Pack package (also known as TO-220F-3), it offers up to 33.8W power dissipation at 25°C case temperature.

FCPF13N60NT Quick Information

Product Type: N-Channel MOSFET
Canonical Name: FCPF13N60NT - N-Channel MOSFET, 600V Drain, 13A, TO-220F
Subcategory: N-Channel MOSFET

FCPF13N60NT Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FCPF13N60NT Features

  • N-Channel MOSFET with 600V drain-source voltage.
  • Continuous drain current rating of 13A at 25°C.
  • Low on-resistance of 258mOhm maximum.
  • Through-hole TO-220F-3 package for easy mounting.
  • Wide operating temperature range -55°C to 150°C.

FCPF13N60NT Applications

  • Commonly used in high-voltage switching power supplies.
  • Suitable for power factor correction circuits.
  • Applicable in DC-DC converters and motor control.

FCPF13N60NT FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the FCPF13N60NT?

600V.

What is the continuous drain current rating?

13A at case temperature 25°C.

What is the maximum on-resistance?

258mOhm at Vgs=10V and Id=6.5A.

What package type does the FCPF13N60NT use?

TO-220-3 Full Pack (TO-220F-3).

What is the operating temperature range?

-55°C to 150°C (junction).

What is the typical gate charge?

Maximum 39.5nC at Vgs=10V.

What is the input capacitance?

Maximum 1765pF at Vds=100V.

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