FCPF1300N80Z N-Channel MOSFET with 800V drain-source voltage, 6A continuous current, and 1.3 Ohm on-resistance. Packaged in TO-220F through-hole.
Mfr Part #:

FCPF1300N80Z

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 800V drain-source voltage, 6A continuous current, and 1.3 Ohm on-resistance. Packaged in TO-220F through-hole.
✓ Total Stock: 23,095 pcs

FCPF1300N80Z Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
23,000 pcs
23000 pcs On Request 1 On Request On Request 19+ On Request On Request
Non-Authorised Inventory information
95 pcs
95 pcs On Request 1 On Request On Request On Request On Request On Request

FCPF1300N80Z Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FCPF1300N80Z Description

Short technical summary and product information.

The FCPF1300N80Z is a high-voltage N-Channel MOSFET from onsemi's SUPERFET II family, utilizing charge balance technology for low on-resistance and reduced gate charge. It is designed for switching power applications requiring high efficiency and ruggedness.

 

Key electrical specifications include a drain-source voltage rating of 800V, continuous drain current of 6A at Tc=25°C (3.8A at 100°C), and maximum on-resistance of 1.3 Ohm at 2A and 10V. Typical gate charge is 16.2 nC at 10V, and input capacitance is 880 pF at Vds=100V. The device also features low effective output capacitance (48.7 pF typ) and low output energy (1.57 µJ at 400V).

 

The MOSFET is 100% avalanche tested with a single-pulse avalanche energy rating of 48 mJ. It is housed in a TO-220F full-pack through-hole package (TO-220-3 Full Pack), offering ease of mounting and thermal performance. Operating junction temperature range is -55°C to 150°C.

 

Applications include AC-DC power supplies and LED lighting, where its low conduction loss and fast switching capability provide design benefits. The device is RoHS compliant and features an internal gate-source ESD diode for improved robustness.

FCPF1300N80Z Quick Information

Product Type: MOSFET
Canonical Name: FCPF1300N80Z N-Channel MOSFET
Subcategory: Power MOSFET

FCPF1300N80Z Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FCPF1300N80Z Features

  • 800V drain-source voltage rating.
  • 6A continuous drain current at 25°C.
  • Low 1.3 Ohm on-resistance (max).
  • RoHS compliant.
  • TO-220F through-hole package.

FCPF1300N80Z Applications

  • AC-DC power supply applications.
  • LED lighting systems.
  • Switching power supplies.

FCPF1300N80Z FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of FCPF1300N80Z?

The maximum drain-source voltage is 800 V.

What package is the FCPF1300N80Z available in?

The device is supplied in TO-220-3 Full Pack (TO-220F-3) through-hole package.

What is the operating temperature range for FCPF1300N80Z?

The operating junction temperature range is -55°C to +150°C.

Is the FCPF1300N80Z RoHS compliant?

Yes, the datasheet states RoHS compliant.

What is the continuous drain current rating of FCPF1300N80Z?

The continuous drain current is 6 A at Tc=25°C and 3.8 A at Tc=100°C.

What is the gate threshold voltage of FCPF1300N80Z?

The maximum gate threshold voltage is 4.5 V at Id=400 µA.

What is the on-resistance of FCPF1300N80Z?

The maximum drain-source on-resistance is 1.3 Ohm at Id=2A, Vgs=10V; typical is 1.05 Ohm.

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