| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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23,000 pcs
|
23000 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
95 pcs
|
95 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCPF1300N80Z is a high-voltage N-Channel MOSFET from onsemi's SUPERFET II family, utilizing charge balance technology for low on-resistance and reduced gate charge. It is designed for switching power applications requiring high efficiency and ruggedness.
Key electrical specifications include a drain-source voltage rating of 800V, continuous drain current of 6A at Tc=25°C (3.8A at 100°C), and maximum on-resistance of 1.3 Ohm at 2A and 10V. Typical gate charge is 16.2 nC at 10V, and input capacitance is 880 pF at Vds=100V. The device also features low effective output capacitance (48.7 pF typ) and low output energy (1.57 µJ at 400V).
The MOSFET is 100% avalanche tested with a single-pulse avalanche energy rating of 48 mJ. It is housed in a TO-220F full-pack through-hole package (TO-220-3 Full Pack), offering ease of mounting and thermal performance. Operating junction temperature range is -55°C to 150°C.
Applications include AC-DC power supplies and LED lighting, where its low conduction loss and fast switching capability provide design benefits. The device is RoHS compliant and features an internal gate-source ESD diode for improved robustness.
The maximum drain-source voltage is 800 V.
The device is supplied in TO-220-3 Full Pack (TO-220F-3) through-hole package.
The operating junction temperature range is -55°C to +150°C.
Yes, the datasheet states RoHS compliant.
The continuous drain current is 6 A at Tc=25°C and 3.8 A at Tc=100°C.
The maximum gate threshold voltage is 4.5 V at Id=400 µA.
The maximum drain-source on-resistance is 1.3 Ohm at Id=2A, Vgs=10V; typical is 1.05 Ohm.