| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,581 pcs
|
2581 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
150 pcs
|
150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FCPF125N65S3 is a 650V N-Channel Power MOSFET from onsemi, part of the SUPERFET III family with Easy Drive technology. It features a maximum drain-source voltage of 650V and continuous drain current of 24A at 25°C. The device has a low on-resistance of 125 mOhm (max) at Vgs=10V and Id=12A, and a typical gate charge of 44 nC. Its low effective output capacitance (405 pF) and high dv/dt capability (100 V/ns) make it suitable for efficient switching applications. The MOSFET is 100% avalanche tested and comes in a TO-220-3 Full Pack (TO-220F) through-hole package. Typical applications include computing, telecom, server, and industrial power supplies, as well as lighting and charger adapters.
650V maximum.
TO-220-3 Full Pack (TO-220F).
150°C.
Yes, it is RoHS3 compliant (Pb-free).
44 nC at Vgs=10V.
125 mOhm maximum at Vgs=10V, Id=12A.
115 mJ at Ias=3.7A, Rg=25Ω, Tj=25°C.