| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FCPF11N60T is an N-Channel power MOSFET from On Semiconductor, designed for high-voltage switching applications. It features a drain-source voltage rating of 600V and a continuous drain current of 11A at case temperature. The device has a maximum on-resistance of 380mOhm at a gate voltage of 10V and a drain current of 5.5A.
This MOSFET utilizes Metal Oxide semiconductor technology and includes a gate threshold voltage of 5V maximum. The gate charge is 52nC at 10V, and the input capacitance is 1490pF at 25V drain-source voltage, allowing for efficient switching performance. The device is rated for power dissipation up to 36W at case temperature.
The FCPF11N60T is housed in a TO-220-3 Full Pack package with through-hole mounting, making it suitable for various power conversion and control circuits. The operating junction temperature range is -55°C to 150°C.
The drain-source voltage (Vdss) is 600V.
The package is TO-220-3 Full Pack (TO-220F).
The operating junction temperature range is -55°C to 150°C.
The RoHS status is listed as RoHS3 compliant, but this is unverified. Verify with official documentation.
The continuous drain current is 11A at case temperature (Tc).
The maximum on-resistance is 380mOhm at Id = 5.5A and Vgs = 10V.
The maximum gate charge is 52nC at Vgs = 10V.