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FCPF11N60NT FCPF11N60NT is an N-Channel power MOSFET from ON Semiconductor with a drain-source voltage rating of 600V and a continuous drain current of 10.8A. It is housed in a TO-220F full-pack package.
Mfr Part #:

FCPF11N60NT

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FCPF11N60NT is an N-Channel power MOSFET from ON Semiconductor with a drain-source voltage rating of 600V and a continuous drain current of 10.8A. It is housed in a TO-220F full-pack package.
✓ Total Stock: 3,700 pcs

FCPF11N60NT Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
3,235 pcs
On Request
3235 pcs On Request 1 On Request On Request On Request On Request On Request
Flip Electronics ✓
Non-Authorised Inventory information
465 pcs
On Request
465 pcs On Request 1 On Request On Request On Request On Request On Request
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FCPF11N60NT Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FCPF11N60NT Description

Short technical summary and product information.

The FCPF11N60NT is an N-Channel enhancement-mode power MOSFET manufactured by ON Semiconductor. It features a drain-source voltage (Vdss) of 600V and a maximum continuous drain current of 10.8A at Tc. The device has a maximum drain-source on-resistance (Rds(on)) of 299 mOhm at Vgs=10V and Id=5.4A. The gate threshold voltage is 4V maximum at Id=250µA, and the maximum gate-source voltage is ±30V. The input capacitance is 1505 pF at Vds=100V, and the total gate charge is 35.6 nC at Vgs=10V. The device is designed for through-hole mounting in a TO-220-3 Full Pack (TO-220F-3) package. The operating junction temperature range is -55°C to 150°C. This MOSFET is suitable for high-voltage switching applications such as power supplies, inverters, and motor control circuits.

FCPF11N60NT Quick Information

Product Type: MOSFET
Canonical Name: FCPF11N60NT N-Channel MOSFET 600V 10.8A TO-220F
Subcategory: N-Channel Power MOSFET

FCPF11N60NT Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FCPF11N60NT Features

  • N-Channel MOSFET with 600V drain-source voltage.
  • Continuous drain current rating of 10.8A.
  • Low on-resistance of 299 mOhm maximum.
  • TO-220F full-pack through-hole package.
  • Operating junction temperature range -55°C to 150°C.

FCPF11N60NT Applications

  • Used in high-voltage power supply circuits.
  • Suitable for DC-DC converter designs.
  • Ideal for motor control applications.
  • Applicable in inverter and UPS systems.

FCPF11N60NT FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FCPF11N60NT?

The drain-source voltage (Vdss) is 600V.

What is the maximum continuous drain current of the FCPF11N60NT?

The maximum continuous drain current is 10.8A at Tc.

What is the on-resistance of the FCPF11N60NT?

The maximum drain-source on-resistance is 299 mOhm at Vgs=10V and Id=5.4A.

What package does the FCPF11N60NT come in?

It comes in a TO-220-3 Full Pack (TO-220F-3) through-hole package.

What is the operating temperature range of the FCPF11N60NT?

The operating junction temperature range is -55°C to 150°C.

Is the FCPF11N60NT RoHS compliant?

Yes, it is listed as RoHS3 Compliant.

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