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FCPF11N60F N-Channel MOSFET, 600V drain-source voltage, 11A continuous drain current, 380mOhm max on-resistance, in a TO-220F through-hole package.
Mfr Part #:

FCPF11N60F

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET, 600V drain-source voltage, 11A continuous drain current, 380mOhm max on-resistance, in a TO-220F through-hole package.
✓ Total Stock: 14,898 pcs

FCPF11N60F Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
8,000 pcs
On Request
8000 pcs On Request 1 On Request On Request On Request On Request On Request
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
6,898 pcs
On Request
6898 pcs On Request 1 On Request On Request On Request On Request On Request
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FCPF11N60F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FCPF11N60F Description

Short technical summary and product information.

The FCPF11N60F is an N-Channel MOSFET from onsemi's SUPERFET and FRFET families. It features a drain-source voltage rating of 600V and a continuous drain current of 11A at 25°C. The device has a maximum on-resistance of 380mOhm at 10V gate drive, with a typical value of 320mOhm. It offers a typical gate charge of 40nC and an input capacitance of 1490pF.

 

This MOSFET is designed for switching power applications including PFC, server/telecom power supplies, and AC-DC converters. The FRFET variant provides an optimized body diode with fast recovery (120ns typical) to improve system reliability. The device is 100% avalanche tested and rated for a single pulsed avalanche energy of 340mJ.

 

The FCPF11N60F is housed in a TO-220-3 Full Pack (TO-220F) through-hole package, suitable for board-level mounting. It is Pb-Free and RoHS compliant, with an operating junction temperature range of -55°C to 150°C.

FCPF11N60F Quick Information

Product Type: MOSFET
Series: FRFET
Canonical Name: FCPF11N60F N-Channel MOSFET
Subcategory: N-Channel

FCPF11N60F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FCPF11N60F Features

  • 600V drain-source voltage rating.
  • 11A continuous drain current at 25°C.
  • 380mOhm maximum on-resistance at 10V.
  • Fast recovery body diode (120ns typical).
  • 100% avalanche tested for reliability.

FCPF11N60F Applications

  • Power factor correction (PFC) circuits.
  • Server and telecom power supplies.
  • AC-DC converter designs.
  • LCD/LED/PDP TV power stages.
  • Solar inverter applications.

FCPF11N60F FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FCPF11N60F?

The maximum drain-source voltage (Vdss) is 600V.

What is the continuous drain current rating at 25°C?

The continuous drain current is 11A at Tc=25°C.

What is the maximum on-resistance of this MOSFET?

The maximum on-resistance (Rds on) is 380mOhm at Id=5.5A and Vgs=10V.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FCPF11N60F RoHS compliant?

Yes, the device is Pb-Free and RoHS compliant as stated in the datasheet.

What package does the FCPF11N60F come in?

It comes in a TO-220-3 Full Pack (TO-220F) through-hole package.

What is the typical gate charge of the FCPF11N60F?

The typical gate charge is 40nC.

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