FCPF11N60 N-Channel MOSFET with 600V drain-source voltage and 11A continuous drain current. Features low on-resistance of 380 mOhm and is housed in a TO-220F through-hole package.
Mfr Part #:

FCPF11N60

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 600V drain-source voltage and 11A continuous drain current. Features low on-resistance of 380 mOhm and is housed in a TO-220F through-hole package.
✓ Total Stock: 6,342 pcs

FCPF11N60 Available from 4 distributors

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✓ Non-Authorised

FCPF11N60 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FCPF11N60 Description

Short technical summary and product information.

The FCPF11N60 is an N-Channel MOSFET from onsemi's SUPERFET family, utilizing charge balance technology for low on-resistance and gate charge. It is rated for a drain-source voltage of 600V (650V at TJ=150°C) and a continuous drain current of 11A at Tc=25°C. The maximum on-resistance is 380 mOhm at Vgs=10V, with a typical value of 320 mOhm. Gate charge is typically 40 nC, and input capacitance is 1490 pF at Vds=25V.

 

The device is avalanche tested with a single pulsed avalanche energy rating of 340 mJ. It is designed for switching power applications such as power factor correction, server/telecom power supplies, flat panel display TV power, ATX power, and industrial power systems. The MOSFET is housed in a TO-220F (TO-220-3 Full Pack) through-hole package with a junction-to-case thermal resistance of 3.5 °C/W and a maximum power dissipation of 36W at Tc=25°C. Operating junction temperature range is -55°C to 150°C.

 

The FCPF11N60 is RoHS3 compliant and Pb-Free, making it suitable for environmentally conscious designs.

FCPF11N60 Quick Information

Product Type: MOSFET
Canonical Name: FCPF11N60 - N-Channel MOSFET, 600V, 11A, TO-220F
Subcategory: N-Channel MOSFET

FCPF11N60 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FCPF11N60 Features

  • N-Channel SUPERFET MOSFET with 600V rating.
  • Low on-resistance of 380 mOhm maximum.
  • Ultra low gate charge of 40 nC typical.
  • 100% avalanche tested for reliability.
  • RoHS and Pb-Free compliant.

FCPF11N60 Applications

  • Suitable for power factor correction circuits.
  • Used in server and telecom power supplies.
  • Ideal for flat panel display TV power.
  • Applicable in ATX power supplies.
  • Industrial power applications.

FCPF11N60 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FCPF11N60?

The drain-source voltage (Vdss) is 600V, with a rating of 650V at TJ=150°C.

What is the maximum continuous drain current?

The maximum continuous drain current is 11A at Tc=25°C and 7A at Tc=100°C.

What is the on-resistance of the FCPF11N60?

The maximum on-resistance is 380 mOhm at Vgs=10V and Id=5.5A, with a typical value of 320 mOhm.

What package does the FCPF11N60 come in?

It is available in a TO-220-3 Full Pack (TO-220F) through-hole package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FCPF11N60 RoHS compliant?

Yes, it is RoHS3 compliant and Pb-Free as stated in the datasheet.

What is the gate charge of the FCPF11N60?

The maximum gate charge is 52 nC at Vgs=10V, with a typical value of 40 nC.

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