FCPF099N65S3 MOSFET N-CH 650V 30A TO220F. This N-Channel power MOSFET from On Semiconductor delivers 650V drain-source voltage rating, 30A continuous current, and low typical on-resistance of 85 mΩ.
Mfr Part #:

FCPF099N65S3

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
MOSFET N-CH 650V 30A TO220F. This N-Channel power MOSFET from On Semiconductor delivers 650V drain-source voltage rating, 30A continuous current, and low typical on-resistance of 85 mΩ.
✓ Total Stock: 36,450 pcs

FCPF099N65S3 Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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33,350 pcs
33350 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,100 pcs
3100 pcs On Request 1 On Request On Request 19+ On Request On Request

FCPF099N65S3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FCPF099N65S3 Description

Short technical summary and product information.

The FCPF099N65S3 is an N-Channel Power MOSFET from On Semiconductor's SUPERFET III family, utilizing advanced charge balance technology. It is rated for a maximum drain-source voltage of 650V and continuous drain current of 30A at 25°C, with a low maximum on-resistance of 99 mΩ at Vgs=10V. The device features a typical gate charge of 57 nC and low effective output capacitance of 517 pF, enabling efficient switching performance. It is designed to withstand extreme dv/dt rates and is 100% avalanche tested, with a single-pulsed avalanche energy rating of 145 mJ.

 

The MOSFET is housed in a TO-220-3 Full Pack (TO-220F) through-hole package, which provides isolation between the mounting tab and the die. The packaging method is tube, with a standard quantity of 1000 units per package. The device is RoHS3 compliant and Pb-free.

 

Typical applications include telecom/server power supplies, industrial power supplies, UPS systems, and solar inverters. The Easy Drive series helps manage EMI issues and simplifies design implementation in high-voltage, high-efficiency power conversion circuits.

FCPF099N65S3 Quick Information

Product Type: MOSFET
Series: Easy Drive
Canonical Name: N-Channel Power MOSFET, 650V, 30A, 99mΩ, TO-220F
Subcategory: N-Channel Power MOSFET

FCPF099N65S3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FCPF099N65S3 Features

  • 650V drain-source voltage rating.
  • 30A continuous drain current at 25°C.
  • Low typical on-resistance of 85 mΩ.
  • Ultra low gate charge of 57 nC.
  • 100% avalanche tested with 145 mJ.

FCPF099N65S3 Applications

  • Telecom and server power supplies.
  • Industrial power supply systems.
  • Uninterruptible Power Supplies (UPS).
  • Solar inverter applications.

FCPF099N65S3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the FCPF099N65S3?

The maximum drain-to-source voltage (Vdss) is 650 V.

What package type does the FCPF099N65S3 come in?

The device is available in a TO-220-3 Full Pack (TO-220F) through-hole package.

What is the operating temperature range for this MOSFET?

The operating junction temperature range is -55°C to 150°C.

Is the FCPF099N65S3 RoHS compliant?

Yes, it is RoHS3 compliant and Pb-free, as verified in the datasheet.

What is the maximum continuous drain current?

At case temperature 25°C, the maximum continuous drain current is 30 A; at 100°C it is 19 A.

What is the typical gate charge of the FCPF099N65S3?

The typical gate charge (Qg) at Vgs=10V is 57 nC.

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