| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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800 pcs
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800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The FCP9N60N-F102 is an N-Channel power MOSFET manufactured by On Semiconductor, utilizing MOSFET (Metal Oxide) technology. It is designed for high-voltage switching applications requiring efficient power management.
Key electrical specifications include a maximum drain-to-source voltage of 600V, a continuous drain current of 9A at case temperature, and a maximum drain-source on-resistance of 385mΩ at 4.5A and 10V gate drive. The device features a maximum gate threshold voltage of 4V and a typical gate charge of 29nC at 10V, enabling efficient gate drive design.
The MOSFET is housed in a TO-220-3 Full Pack (TO-220F) through-hole package, suitable for PCB mounting with adequate thermal management. Maximum power dissipation is 83.3W at case temperature, and the operating junction temperature range is -55°C to 150°C.
The maximum drain-to-source voltage is 600V.
The maximum drain current is 9A at case temperature (Tc).
The maximum drain-source on-resistance is 385mΩ at Id=4.5A and Vgs=10V.
It comes in a TO-220-3 Full Pack (TO-220F) through-hole package.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage is 4V at Id=250µA.
The maximum power dissipation is 83.3W at case temperature (Tc).