| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The FCP650N80Z is an N-Channel MOSFET from On Semiconductor designed for high-voltage switching applications. It features a maximum drain-source voltage of 800V and a continuous drain current rating of 10A. The device offers a maximum on-resistance of 650mOhm at 4A drain current and 10V gate drive, with a gate charge of 35nC at 10V and input capacitance of 1565pF at 100V drain-source voltage.
This MOSFET is housed in a through-hole TO-220-3 package, suitable for easy mounting on printed circuit boards. It can dissipate up to 162W of power and operates over a junction temperature range of -55°C to 150°C. The device is intended for use in power supply circuits, DC-DC converters, motor control, and other high-voltage switching applications.
With its high voltage rating and moderate current capability, the FCP650N80Z provides a reliable solution for designs requiring efficient switching and robust performance. The through-hole package facilitates thermal management and mechanical stability in industrial and consumer electronics.
The maximum drain-source voltage is 800V.
The continuous drain current is 10A at case temperature Tc.
It comes in a TO-220-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
The database indicates RoHS3 compliance, but this is unverified and low confidence.
The maximum on-resistance is 650mOhm at 4A drain current and 10V gate drive.
The maximum gate charge is 35nC at 10V gate-source voltage.