| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,665 pcs
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2665 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
FCP4N60 is an N-Channel power MOSFET manufactured by ON Semiconductor. It is designed for high-voltage switching applications with a maximum drain-to-source voltage of 600V and continuous drain current of 3.9A at case temperature. The device features a maximum on-resistance of 1.2 Ohm at 2A, 10V gate drive, ensuring efficient power conversion.
The MOSFET offers a low gate charge of 16.6 nC at 10V and an input capacitance of 540 pF at 25V, contributing to reduced switching losses. The gate threshold voltage is 5V at 250 µA drain current, and the maximum gate-source voltage is ±30V. The device operates over a junction temperature range of -55°C to 150°C.
The FCP4N60 is housed in a TO-220-3 through-hole package, suitable for standard PCB mounting and heatsink attachment. With a maximum power dissipation of 50W at case temperature, it is appropriate for power supply circuits, switch-mode power supplies, and other power management applications.
600V.
TO-220-3.
-55°C to 150°C junction temperature.
The part is listed as RoHS3 compliant.
Maximum 1.2 Ohm at 2A, 10V gate drive.
5V maximum at 250 µA drain current.
16.6 nC at 10V gate-source voltage.