| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
914 pcs
|
914 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCP400N80Z is an N-channel power MOSFET designed for high-voltage switching applications. With a drain-source voltage rating of 800V and continuous drain current of 14A, it offers a maximum on-resistance of 400mOhm at 10V gate drive. The device features a typical gate charge of 56nC and input capacitance of 2350pF, enabling efficient switching in power conversion circuits. The MOSFET is housed in a standard TO-220-3 through-hole package, suitable for easy mounting on heatsinks. It operates over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 195W at case temperature 25°C. This product is manufactured by ON Semiconductor, a trusted name in semiconductor solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.30 | $1.30 |
| 10+ | $1.16 | $1.16 |
| 100+ | $0.95 | $0.95 |
| 800+ | $0.69 | $0.69 |
| 1,600+ | $0.65 | $0.65 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
14A at case temperature 25°C.
400mOhm maximum at 5.5A drain current and 10V gate-source voltage.
56nC maximum at 10V gate-source voltage.
Through-hole, TO-220-3.
-55°C to 150°C (junction temperature).
Yes, RoHS3 compliant (unverified).