| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
107,200 pcs
|
107200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
9,136 pcs
|
9136 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCP380N60E is an N-Channel power MOSFET manufactured by On Semiconductor, designed for high-voltage switching applications. It features a maximum drain-source voltage of 600V and a continuous drain current of 10.2A at case temperature (Tc). The device has a low on-resistance of 380 mOhm at 5A and 10V gate drive, ensuring efficient power conversion. With a maximum power dissipation of 106W, it is suitable for moderate power levels. The MOSFET is housed in the industry-standard TO-220-3 through-hole package, making it easy to mount on heatsinks for thermal management. It operates over a junction temperature range of -55°C to 150°C. Typical applications include power supplies, motor control, and inverters. The part is RoHS compliant and has a moisture sensitivity level of 1 (unlimited).
The maximum drain-source voltage is 600V.
The continuous drain current is 10.2A at case temperature (Tc).
It is in a TO-220-3 through-hole package.
The junction temperature range is -55°C to 150°C.
Yes, it is listed as RoHS3 compliant (unverified).
The maximum drain-source on-resistance is 380 mOhm at 5A, 10V.
The maximum gate threshold voltage is 3.5V at 250µA.