| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,739 pcs
|
3739 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCP36N60N is an N-Channel power MOSFET from On Semiconductor, built with SupreMOS technology. It is designed for high-voltage switching applications requiring efficient power conversion.
Key electrical specifications include a 600V drain-to-source breakdown voltage, a continuous drain current of 36A at case temperature, and a maximum on-resistance of 90mOhm at 18A and 10V gate drive. The device offers a gate charge of 112nC and an input capacitance of 4785pF, enabling moderate switching speeds.
The FCP36N60N is housed in a standard TO-220-3 through-hole package, suitable for heatsink mounting in power supply and motor control circuits. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 312W.
The maximum drain-to-source voltage (Vdss) is 600V.
The maximum continuous drain current is 36A at case temperature (Tc).
The maximum on-resistance (Rds(on)) is 90mOhm at a drain current of 18A and gate-source voltage of 10V.
The operating junction temperature range is -55°C to 150°C.
The FCP36N60N is available in a TO-220-3 through-hole package.
The maximum gate charge (Qg) is 112nC at a gate-source voltage of 10V.
The maximum power dissipation is 312W at case temperature (Tc).