| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,791 pcs
|
2791 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The FCP360N65S3R0 is a high-voltage N-Channel power MOSFET from On Semiconductor, part of the SUPERFET III Easy Drive family. Utilizing charge balance technology, this super-junction MOSFET delivers outstanding low on-resistance and lower gate charge performance, minimizing conduction losses and enabling superior switching performance.
Key electrical specifications include a drain-to-source voltage (Vdss) of 650V, continuous drain current of 10A at 25°C (derated to 6A at 100°C), and a maximum Rds(on) of 360mΩ at 10V gate drive (typical 310mΩ). The device features an ultra-low typical gate charge of 18nC and low effective output capacitance of 173pF, which helps manage EMI and simplifies design. It is 100% avalanche tested, with a single pulsed avalanche energy rating of 40mJ.
Typical applications include computing/display power supplies, telecom/server power supplies, industrial power supplies, and lighting/charger/adapters. The MOSFET is capable of withstanding high dv/dt rates (up to 100 V/ns MOSFET dv/dt).
The FCP360N65S3R0 is packaged in a TO-220-3 through-hole package, supplied in tubes with a standard pack quantity of 50 pieces. It is Pb-free and RoHS compliant.
650 V.
TO-220-3 (through-hole).
-55°C to 150°C (junction).
Yes, RoHS3 compliant and Pb-free.
10 A.
Maximum 4.5 V at Id = 1 mA.
18 nC at Vgs = 10 V.