| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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154 pcs
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154 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCP260N60E is an N-Channel MOSFET from On Semiconductor, designed for high voltage switching applications. With a maximum drain-to-source voltage of 600V and continuous drain current of 15A, it offers a maximum on-resistance of 260mOhm at 7.5A and 10V gate drive. The gate threshold voltage is typically 3.5V at 250µA drain current.
The device features a maximum gate charge of 62 nC at 10V and input capacitance of 2500 pF at 25V, enabling efficient switching performance. Maximum power dissipation is 156W at case temperature. The operating junction temperature range spans -55°C to 150°C.
Packaged in a TO-220-3 through-hole package, the FCP260N60E is suitable for designs requiring high reliability and thermal performance. The mounting type is through hole, facilitating easy integration into power circuits. This MOSFET is RoHS3 compliant and has an MSL rating of 1 (unlimited), making it suitable for lead-free soldering processes.
The maximum drain-source voltage (Vdss) is 600V.
The FCP260N60E is offered in a TO-220-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
Yes, it is listed as RoHS3 compliant (unverified).
The maximum continuous drain current (Tc) is 15A.
The maximum on-resistance is 260mOhm at 7.5A and 10V gate drive.
The maximum gate threshold voltage is 3.5V at 250µA drain current.