| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,400 pcs
|
2400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Number of Pins | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCP25N60N-F102 is an N-Channel power MOSFET from ON Semiconductor, designed for high-voltage switching applications. It features a maximum drain-source voltage of 600V and a continuous drain current of 25A at case temperature Tc.
Key electrical characteristics include a maximum on-resistance of 125mOhm at Vgs=10V and Id=12.5A, a typical gate charge of 74nC, and input capacitance of 3352pF. The device operates over a junction temperature range of -55°C to 150°C.
The MOSFET is housed in a standard TO-220-3 through-hole package, suitable for easy mounting on heatsinks. It is RoHS3 compliant and has an MSL rating of 1 (unlimited). This part is a direct replacement for the Fairchild FCP25N60N_F102, with the underscore replaced by a dash per ON Semiconductor's part numbering system.
| Qty | Low | High |
|---|---|---|
| 99+ | $2.85 | $2.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
TO-220-3 through-hole package.
-55°C to 150°C (junction temperature).
Yes, it is RoHS3 compliant.
25A at case temperature Tc.
125mOhm maximum at Vgs=10V and Id=12.5A.
74nC maximum at Vgs=10V.