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FCP220N80 N-Channel MOSFET rated for 800V drain-source voltage and 23A continuous drain current. Features 220mOhm on-resistance at 10V gate drive and is housed in a TO-220-3 through-hole package.
Mfr Part #:

FCP220N80

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 800V drain-source voltage and 23A continuous drain current. Features 220mOhm on-resistance at 10V gate drive and is housed in a TO-220-3 through-hole package.
✓ Total Stock: 565 pcs

FCP220N80 Available from 1 distributor

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✓ Non-Authorised
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565 pcs
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FCP220N80 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FCP220N80 Description

Short technical summary and product information.

The FCP220N80 is an N-Channel power MOSFET from ON Semiconductor, designed for high-voltage switching applications. It features a maximum drain-source voltage of 800V and a continuous drain current of 23A at case temperature. The device offers a low on-resistance of 220mOhm at 11.5A and 10V gate drive, minimizing conduction losses. Gate charge is 105nC at 10V, and input capacitance is 4560pF at 100V drain-source voltage. The threshold voltage is 4.5V at 2.3mA drain current. The MOSFET is capable of dissipating up to 278W at case temperature. It operates over a junction temperature range of -55°C to 150°C. The device is housed in a standard TO-220-3 through-hole package, suitable for easy mounting on heatsinks. Typical applications include power supplies, inverters, and motor control circuits where high voltage and efficiency are required.

FCP220N80 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: FCP220N80 N-Channel MOSFET 800V 23A TO-220-3
Subcategory: Single

FCP220N80 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FCP220N80 Features

  • N-Channel MOSFET with 800V drain-source voltage.
  • 23A continuous drain current rating.
  • Low on-resistance of 220mOhm at 10V.
  • TO-220-3 through-hole package.
  • Operating temperature range -55°C to 150°C.

FCP220N80 Applications

  • Used in high-voltage power supplies.
  • Suitable for motor control circuits.
  • Ideal for inverter and converter designs.
  • Applicable in switching regulators.

FCP220N80 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FCP220N80?

800V.

What is the package type of the FCP220N80?

TO-220-3 through-hole package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the FCP220N80 RoHS compliant?

RoHS3 Compliant (unverified, low confidence).

What is the on-resistance of the FCP220N80?

220mOhm at 11.5A and 10V gate drive.

What is the gate charge of the FCP220N80?

105nC at 10V gate voltage.

What is the maximum drain current?

23A at case temperature.

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