| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FCP20N60 is an N-Channel SuperFET MOSFET from On Semiconductor. It features a drain-source voltage of 600V and continuous drain current of 20A (Tc=25°C). The typical on-resistance is 150mΩ with a maximum of 190mΩ at 10V gate drive. This device utilizes charge balance technology to achieve low conduction loss and superior switching performance. It has a low gate charge (typical 75nC) and low effective output capacitance. The MOSFET is avalanche tested and supports high dv/dt ratings. Applications include solar inverters, AC-DC power supplies, and other switching power applications. The device is housed in a TO-220-3 through-hole package and is RoHS compliant.
600V.
TO-220-3.
-55°C to 150°C (junction temperature).
Yes, the component is RoHS3 compliant per the datasheet.
20A at Tc=25°C, 12.5A at Tc=100°C.
150mΩ typical, 190mΩ maximum at 10A, 10V.
75nC typical, 98nC maximum at Vgs=10V.