| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,100 pcs
|
9100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
800 pcs
|
800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FCP190N65S3R0 is an N-Channel power MOSFET from On Semiconductor, utilizing the SUPERFET III technology with charge balance for low on-resistance and gate charge. It is rated for a maximum drain-source voltage of 650V and continuous drain current of 17A at 25°C case temperature. Typical on-resistance is 159mΩ, with a maximum of 190mΩ at 8.5A and 10V gate drive. Gate charge is typically 33nC at 10V, and effective output capacitance is 300pF, aiding efficient switching performance. The device is 100% avalanche tested with a single pulse avalanche energy rating of 76mJ. It is housed in a TO-220-3 through-hole package and operates over a junction temperature range of -55°C to 150°C. The FCP190N65S3R0 is RoHS3 compliant and Pb-Free. Typical applications include computing and display power supplies, telecom and server power supplies, industrial power supplies, and lighting/charger/adapter circuits.
650 V.
TO-220-3 through-hole package.
-55°C to 150°C (junction temperature).
Yes, it is RoHS3 compliant and Pb-Free.
33 nC at 10 V.
190 mΩ at 8.5 A and 10 V.
Yes, it is 100% avalanche tested with a single pulse avalanche energy rating of 76 mJ.