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FCP190N65F FCP190N65F is an N-Channel MOSFET from On Semiconductor with a 650V drain-source voltage rating and 20.6A continuous drain current. It is housed in a through-hole TO-220-3 package.
Mfr Part #:

FCP190N65F

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
FCP190N65F is an N-Channel MOSFET from On Semiconductor with a 650V drain-source voltage rating and 20.6A continuous drain current. It is housed in a through-hole TO-220-3 package.
✓ Total Stock: 15,806 pcs

FCP190N65F Available from 3 distributors

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Optech Co.,Limited ✓
Non-Authorised Inventory information
7,850 pcs
On Request
7850 pcs On Request 1 On Request On Request 21+ On Request On Request
Smaxon Electronics ✓
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6,484 pcs
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6484 pcs On Request 1 On Request On Request 21+ On Request On Request
Xingangxin ✓
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1,472 pcs
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1472 pcs On Request 1 On Request On Request On Request On Request On Request
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FCP190N65F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FCP190N65F Description

Short technical summary and product information.

The FCP190N65F is an N-Channel MOSFET manufactured by ON Semiconductor. It features a drain-to-source voltage (Vdss) of 650V and a maximum continuous drain current (Id) of 20.6A at case temperature (Tc). The device has a maximum on-resistance (Rds(on)) of 190mOhm at a gate drive of 10V and drain current of 10A.

 

This MOSFET is designed for high-voltage switching applications. It offers a maximum gate charge (Qg) of 78nC at Vgs = 10V and an input capacitance (Ciss) of 3225pF at Vds = 25V. The gate threshold voltage (Vgs(th)) is a maximum of 5V at Id = 2mA, and the recommended drive voltage is 10V. The maximum power dissipation is 208W at Tc, and the operating junction temperature range is -55°C to 150°C.

 

The device is packaged in a through-hole TO-220-3 package, suitable for mounting on printed circuit boards. It is RoHS3 compliant and REACH unaffected, with an MSL rating of 1 (unlimited).

FCP190N65F Quick Information

Product Type: MOSFET
Canonical Name: FCP190N65F N-Channel 650V 20.6A (Tc) MOSFET
Subcategory: Single MOSFET

FCP190N65F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FCP190N65F Features

  • 650V drain-to-source voltage rating.
  • 20.6A continuous drain current at Tc.
  • 190mOhm maximum on-resistance at 10V.
  • Through-hole TO-220-3 package.
  • RoHS3 compliant and REACH unaffected.

FCP190N65F Applications

  • High-voltage DC-DC converter circuits.
  • AC-DC power supply switching stages.
  • Motor drive and inverter applications.
  • Power factor correction (PFC) circuits.

FCP190N65F FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the FCP190N65F?

The maximum drain-to-source voltage (Vdss) is 650V.

What is the maximum continuous drain current of this MOSFET?

The maximum continuous drain current (Id) is 20.6A at case temperature (Tc).

What is the on-resistance of the FCP190N65F?

The maximum on-resistance (Rds(on)) is 190mOhm at Id = 10A and Vgs = 10V.

What package is the FCP190N65F available in?

It is available in a through-hole TO-220-3 package.

What is the operating temperature range of the FCP190N65F?

The operating junction temperature range is -55°C to 150°C.

Is the FCP190N65F RoHS compliant?

Yes, it is listed as RoHS3 compliant.

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