| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,935 pcs
|
1935 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCP190N60E is an N-Channel MOSFET from onsemi, part of the SUPERFET II Easy-Drive family. It utilizes charge balance technology to achieve low on-resistance and low gate charge, minimizing conduction losses and enabling efficient switching performance. The device is rated for a maximum drain-source voltage of 600V and a continuous drain current of 20.6A at 25°C case temperature, with a maximum on-resistance of 190mOhm at 10V gate drive.
Key electrical characteristics include a typical gate charge of 63nC, a typical input capacitance of 3175pF, and a low effective output capacitance of 178pF. The device is avalanche tested and offers a single pulsed avalanche energy rating of 400mJ, making it suitable for applications requiring ruggedness. The gate threshold voltage is 3.5V maximum, and the recommended gate drive voltage is 10V.
This MOSFET is designed for applications such as LCD/LED/PDP TV lighting, solar inverters, and AC-DC power supplies. The Easy-Drive series provides slightly slower rise and fall times compared to standard SUPERFET II devices, which helps manage EMI and simplifies design implementation.
The FCP190N60E is available in a TO-220-3 through-hole package, suitable for standard PCB mounting. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 208W at 25°C case temperature. The device is RoHS compliant.
The maximum drain-source voltage is 600V at Tc=25°C.
The maximum continuous drain current is 20.6A at Tc=25°C, and 13.1A at Tc=100°C.
The typical on-resistance is 160mOhm, with a maximum of 190mOhm at Id=10A and Vgs=10V.
The operating junction temperature range is -55°C to 150°C.
The FCP190N60E is available in a TO-220-3 through-hole package.
Yes, the FCP190N60E is stated to be RoHS compliant in the datasheet.
The typical gate charge is 63nC, with a maximum of 82nC at Vgs=10V.