| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,357 pcs
|
2357 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCP190N60-GF102 is an N-Channel enhancement mode power MOSFET manufactured by ON Semiconductor. It features a drain-source breakdown voltage of 600V and a continuous drain current of 20.2A at a case temperature of 25°C. The typical on-resistance is 199mOhm maximum with a 10V gate drive, enabling efficient switching in high-voltage applications. This device offers a maximum gate charge of 74nC and input capacitance of 2950pF, contributing to reduced switching losses. The maximum power dissipation is 208W at 25°C case temperature. The MOSFET operates over a junction temperature range of -55°C to 150°C. The gate threshold voltage is 3.5V maximum at 250µA drain current, and the maximum gate-source voltage is ±20V. It is supplied in the industry-standard TO-220-3 package with through-hole mounting, suitable for power conversion circuits such as switch-mode power supplies, inverters, and motor drives.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.14 | $2.14 |
| 10+ | $1.93 | $1.93 |
| 100+ | $1.58 | $1.58 |
| 500+ | $1.34 | $1.34 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 600 V minimum.
It is available in a TO-220-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
It is marked as RoHS3 compliant, but this information is unverified.
The maximum continuous drain current is 20.2 A at Tc = 25°C.
The maximum drain-source on-resistance is 199 mOhm at Id = 10 A, Vgs = 10 V.
The maximum gate threshold voltage is 3.5 V at Id = 250 µA.