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191 pcs
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191 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Fairchild Semiconductor FCP190N60 is an N-channel Power MOSFET from the Superfet II family, engineered for high efficiency and performance. This device is tailored to minimize conduction loss, offer superior switching characteristics, and provide a high avalanche energy rating.
Key electrical specifications include a maximum drain-source voltage of 600V and a maximum on-resistance (RDS(on)) of 199mΩ at a gate-source voltage of 10V and drain current of 20.2A. The threshold voltage is 2.5V. It also features an input capacitance of 3.175nF, a rise time of 14ns, and a fall time of 15ns.
The FCP190N60 has a maximum power dissipation of 208W. It operates within a temperature range of -55°C to 150°C. The component is mounted using a through-hole method and comes in a standard TO-220 package.
This MOSFET is suitable for applications where low conduction loss, efficient switching, and high avalanche energy are critical. Its design aims to enhance overall system reliability and performance.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600V.
The maximum on-resistance (RDS(on)) is 199mΩ.
The operating temperature range is from -55°C to 150°C.
The FCP190N60 is available in a TO-220 package.
The FCP190N60 is mounted using a through-hole method.