| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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22,544 pcs
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22544 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FCP190N60 is an N-Channel MOSFET from On Semiconductor's SUPERFET II family, designed for high-voltage switching power applications. It utilizes charge balance technology to achieve low on-resistance (199 mOhm max) and low gate charge (57 nC typical).
The device is rated for a drain-source voltage of 600V (650V at 150°C junction temperature) and can handle a continuous drain current of 20.2A at 25°C case temperature. It comes in a TO-220-3 through-hole package.
Typical applications include AC-DC power supplies, PFC circuits, server and telecom power, and TV power systems. The MOSFET is 100% avalanche tested and RoHS compliant.
The drain-source voltage (Vdss) is 600V with a typical value of 650V at 150°C junction temperature.
The continuous drain current is 20.2A at 25°C case temperature and 12.7A at 100°C.
The package is TO-220-3 (through-hole).
The operating junction temperature range is -55°C to 150°C.
Yes, the FCP190N60 is RoHS3 compliant as stated in the datasheet.
The typical gate charge is 57 nC at a gate-source voltage of 10V.