| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
795 pcs
|
795 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCP170N60 is an N-Channel power MOSFET from ON Semiconductor. It features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 22A at 25°C case temperature. The maximum on-resistance (Rds(on)) is 170mOhm at 11A drain current and 10V gate drive. The gate charge (Qg) is 55nC maximum at 10V, and the input capacitance (Ciss) is 2860pF maximum at 380V drain-source voltage. The device can dissipate up to 227W of power and operates over a junction temperature range of -55°C to 150°C. It is offered in a TO-220-3 through-hole package, suitable for high-voltage switching applications such as power supplies, motor control, and lighting ballasts.
| Qty | Low | High |
|---|---|---|
| 25+ | $3.24 | $3.24 |
| 100+ | $3.08 | $3.08 |
| 271+ | $2.72 | $2.72 |
| 500+ | $2.92 | $2.92 |
| 542+ | $2.71 | $2.71 |
| 1,000+ | $2.75 | $2.75 |
| 1,084+ | $2.54 | $2.54 |
| 2,168+ | $2.53 | $2.53 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
22A at 25°C case temperature.
170mOhm at 11A and 10V gate drive.
55nC maximum at 10V.
-55°C to 150°C (junction).
TO-220-3 through-hole.
RoHS3 Compliant (unverified).