| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCP16N60N is an N-Channel power MOSFET from ON Semiconductor, designed for high-voltage switching applications. It features a maximum drain-source voltage of 600V and a continuous drain current of 16A at 25°C case temperature. The device has a low on-resistance of 199mOhm maximum at 8A and 10V gate drive, enabling efficient power conversion.
Key electrical characteristics include a total gate charge of 52.3nC maximum at 10V, which supports fast switching, and an input capacitance of 2170pF at 100V. The MOSFET can dissipate up to 134.4W at 25°C case temperature and operates over a junction temperature range of -55°C to 150°C. The threshold voltage is 4V maximum at 250µA.
The FCP16N60N is housed in a through-hole TO-220-3 package, suitable for easy mounting on printed circuit boards. It is RoHS compliant and has an MSL rating of 1 (unlimited). This component is intended for use in power supplies, motor controls, and other high-voltage switching circuits where reliability and performance are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.39 | $4.39 |
| 10+ | $3.94 | $3.94 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
TO-220-3.
-55°C to 150°C (junction).
According to existing data, it is RoHS3 compliant, but this is unverified and should be confirmed with the manufacturer.
16A at 25°C case temperature.
199mOhm maximum at 8A and 10V gate drive.
52.3nC maximum at 10V gate voltage.