FCP150N65F N-Channel enhancement mode MOSFET with 650V drain-source breakdown voltage and 24A continuous drain current at 25°C. Features 150mOhm maximum on-resistance at 10V gate drive, in a TO-220-3 through-hole package.
Mfr Part #:

FCP150N65F

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel enhancement mode MOSFET with 650V drain-source breakdown voltage and 24A continuous drain current at 25°C. Features 150mOhm maximum on-resistance at 10V gate drive, in a TO-220-3 through-hole package.
✓ Total Stock: 800 pcs
$ Price Range: $2.68 - $6.45

FCP150N65F Available from 1 distributor

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✓ Non-Authorised
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FCP150N65F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FCP150N65F Description

Short technical summary and product information.

The FCP150N65F is an N-Channel enhancement mode MOSFET manufactured by ON Semiconductor, designed for high-voltage power switching applications. It offers a maximum drain-source breakdown voltage of 650V and a continuous drain current of 24A at 25°C case temperature, with a maximum power dissipation of 298W.

 

This device features a maximum on-resistance of 150mOhm at a gate drive of 10V and drain current of 12A, enabling efficient switching. The gate threshold voltage is 5V maximum at 2.4mA drain current, and it can tolerate a gate-source voltage of ±20V. Input capacitance is 3737pF at 100V drain-source.

 

The FCP150N65F is housed in a standard TO-220-3 through-hole package, suitable for manual or automated assembly. It operates over a junction temperature range of -55°C to 150°C. The part is listed as RoHS3 compliant, with MSL Level 1 (unlimited) and REACH unaffected, though these compliance values are unverified.

FCP150N65F Quick Information

Product Type: N-Channel MOSFET
Series: SuperFET II FRFET
Canonical Name: FCP150N65F - N-Channel MOSFET, 650V, 24A, TO-220-3
Subcategory: N-Channel MOSFET

FCP150N65F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FCP150N65F Estimated Pricing

Qty Low High
1+ $6.45 $6.45
10+ $4.34 $4.34
50+ $3.44 $3.44
100+ $3.15 $3.15
500+ $2.68 $2.68

Estimated market price range - modelled values for guidance only, not live distributor offers.

FCP150N65F Features

  • N-channel enhancement mode MOSFET.
  • 650V drain-source breakdown voltage.
  • 24A continuous drain current at 25°C.
  • 150mOhm maximum on-resistance at 10V gate drive.
  • TO-220-3 through-hole package.

FCP150N65F Applications

  • High-voltage power supply circuits.
  • DC-DC converters and inverters.
  • Motor control systems.
  • Switching power applications.

FCP150N65F FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the FCP150N65F?

650 V maximum.

What package does the FCP150N65F come in?

TO-220-3 through-hole package.

What is the operating temperature range of the FCP150N65F?

-55°C to 150°C junction temperature.

Is the FCP150N65F RoHS compliant?

It is listed as RoHS3 compliant, but this has not been verified.

What is the maximum drain current of the FCP150N65F?

24 A at 25°C case temperature.

What is the gate threshold voltage of the FCP150N65F?

Maximum 5 V at 2.4 mA drain current.

What is the drain-source on-resistance of the FCP150N65F?

Maximum 150 mOhm at 12 A drain current and 10 V gate-source voltage.

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