| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200 pcs
|
200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCP125N65S3 is an N-Channel power MOSFET from onsemi's SUPERFET III family, utilizing charge balance technology for low on-resistance and reduced gate charge. It is rated for a drain-to-source voltage of 650V and a continuous drain current of 24A at 25°C case temperature, with a maximum on-resistance of 125mΩ at 10V gate drive.
This device offers a typical gate charge of 46nC and low effective output capacitance of 439pF, enabling efficient high-frequency switching. It is 100% avalanche tested and can withstand extreme dv/dt rates, making it suitable for demanding power conversion applications.
Packaged in a TO-220-3 through-hole case, the FCP125N65S3 is designed for easy mounting and thermal management. It operates over a junction temperature range of -55°C to 150°C and dissipates up to 181W at 25°C case temperature.
Typical applications include telecom and server power supplies, industrial power supplies, and UPS/solar systems. The device is Pb-Free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.94 | $5.94 |
| 10+ | $3.97 | $3.97 |
| 50+ | $3.13 | $3.13 |
| 100+ | $2.86 | $2.86 |
| 500+ | $2.38 | $2.38 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 650V, with a minimum breakdown voltage of 700V at Tj=150°C.
The continuous drain current is 24A at TC=25°C, and 15A at TC=100°C.
The typical on-resistance is 105mΩ, with a maximum of 125mΩ at Vgs=10V and Id=12A.
The junction operating temperature range is -55°C to 150°C.
It is available in a TO-220-3 through-hole package.
Yes, the device is Pb-Free and RoHS compliant.
The typical gate charge is 46nC at Vgs=10V.