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FCP11N60N N-Channel MOSFET rated for 600V drain-source voltage and 10.8A continuous drain current. Features 299mΩ maximum on-resistance at 10V gate drive.
Mfr Part #:

FCP11N60N

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 600V drain-source voltage and 10.8A continuous drain current. Features 299mΩ maximum on-resistance at 10V gate drive.
✓ Total Stock: 896 pcs
$ Price Range: $1.09

FCP11N60N Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
790 pcs
On Request
790 pcs On Request 1 On Request On Request On Request On Request On Request
Braun Electronic Components ✓
Non-Authorised Inventory information
106 pcs
On Request
106 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FCP11N60N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FCP11N60N Description

Short technical summary and product information.

The FCP11N60N is an N-Channel power MOSFET from On Semiconductor, designed for high-voltage switching applications. It features a drain-to-source voltage rating of 600V and a continuous drain current of 10.8A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance of 299mΩ at 5.4A drain current and 10V gate drive, a maximum gate charge of 35.6nC at 10V, and an input capacitance of 1505pF at 100V drain-source voltage. The device is capable of dissipating up to 94W at 25°C case temperature.

 

The MOSFET is housed in a through-hole TO-220-3 package, suitable for PCB mounting. It operates over a junction temperature range of -55°C to 150°C.

FCP11N60N Quick Information

Product Type: MOSFET
Series: SupreMOS
Canonical Name: FCP11N60N N-Channel MOSFET
Subcategory: Single N-Channel

FCP11N60N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FCP11N60N Estimated Pricing

Qty Low High
790+ $1.09 $1.09

Estimated market price range - modelled values for guidance only, not live distributor offers.

FCP11N60N Features

  • N-Channel MOSFET rated for 600V drain-source voltage.
  • Continuous drain current of 10.8A at 25°C.
  • Low on-resistance of 299mΩ maximum at 10V gate drive.
  • Through-hole TO-220-3 package for easy PCB mounting.
  • Wide operating temperature range from -55°C to 150°C.

FCP11N60N Applications

  • Suitable for high-voltage power supply circuits.
  • Used in AC-DC converters and inverters.
  • Ideal for motor control and switching applications.

FCP11N60N FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FCP11N60N?

The maximum drain-source voltage (Vdss) is 600V.

What is the continuous drain current rating of the FCP11N60N?

The continuous drain current (Id) is 10.8A at 25°C case temperature.

What is the maximum on-resistance of the FCP11N60N?

The maximum on-resistance (Rds On) is 299mΩ at 5.4A drain current and 10V gate drive.

What package does the FCP11N60N come in?

The FCP11N60N is available in a through-hole TO-220-3 package.

What is the operating temperature range of the FCP11N60N?

The operating junction temperature range is -55°C to 150°C.

What is the maximum power dissipation of the FCP11N60N?

The maximum power dissipation is 94W at 25°C case temperature.

What is the gate threshold voltage of the FCP11N60N?

The maximum gate threshold voltage (Vgs(th)) is 4V at 250µA drain current.

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