FCP110N65F The FCP110N65F is an N-Channel power MOSFET from On Semiconductor with a 650V drain-source breakdown voltage and 35A continuous drain current.
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FCP110N65F

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FCP110N65F is an N-Channel power MOSFET from On Semiconductor with a 650V drain-source breakdown voltage and 35A continuous drain current.
✓ Total Stock: 4,349 pcs
$ Price Range: $3.37 - $7.66

FCP110N65F Available from 1 distributor

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✓ Non-Authorised
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FCP110N65F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FCP110N65F Description

Short technical summary and product information.

The FCP110N65F is an N-Channel power MOSFET manufactured by ON Semiconductor. It features a drain-source breakdown voltage of 650V and a continuous drain current rating of 35A at the case temperature. The device has a maximum drain-source on-resistance of 110 milliohms at a gate drive voltage of 10V and a drain current of 17.5A.

 

This MOSFET offers a maximum gate charge of 145 nC at 10V and an input capacitance of 4895 pF at 100V drain-source voltage. The maximum gate threshold voltage is 5V at a drain current of 3.5mA. The device can dissipate up to 357W at the case temperature and operates over a junction temperature range of -55°C to 150°C.

 

The FCP110N65F is housed in a TO-220-3 through-hole package, making it suitable for power conversion and switching applications where efficient thermal management is required. The through-hole mounting allows for secure attachment to heatsinks.

FCP110N65F Quick Information

Product Type: Power MOSFET
Series: SuperFET II FRFET
Canonical Name: FCP110N65F N-Channel Power MOSFET
Subcategory: Single MOSFETs

FCP110N65F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FCP110N65F Estimated Pricing

Qty Low High
1+ $7.66 $7.66
10+ $5.20 $5.20
50+ $4.15 $4.15
100+ $3.81 $3.81
500+ $3.37 $3.37

Estimated market price range - modelled values for guidance only, not live distributor offers.

FCP110N65F Features

  • N-Channel MOSFET with 650V drain-source breakdown.
  • 35A continuous drain current at case temperature.
  • 110mOhm maximum on-resistance at 10V gate drive.
  • Through-hole TO-220-3 package for easy mounting.
  • Operates from -55°C to 150°C junction temperature.

FCP110N65F Applications

  • Suitable for power supply switching circuits.
  • Used in motor control and inverter designs.
  • Ideal for high-voltage DC-DC converters.
  • Applicable in power factor correction stages.

FCP110N65F FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the FCP110N65F?

The drain-source breakdown voltage is 650V.

What is the maximum continuous drain current of the FCP110N65F?

The maximum continuous drain current is 35A at the case temperature.

What is the on-resistance of the FCP110N65F?

The maximum drain-source on-resistance is 110 milliohms at a gate voltage of 10V and drain current of 17.5A.

What package does the FCP110N65F come in?

The FCP110N65F is in a TO-220-3 through-hole package.

What is the operating temperature range of the FCP110N65F?

The operating junction temperature range is -55°C to 150°C.

Is the FCP110N65F RoHS compliant?

The FCP110N65F is listed as RoHS3 compliant, though this is unverified.

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