| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,373 pcs
|
4373 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCP104N60F is a N-Channel MOSFET manufactured by ON Semiconductor. It features a drain-source breakdown voltage of 600V and a continuous drain current rating of 37A (at Tc). The device offers a maximum on-resistance of 104 mΩ at a gate drive of 10V and 18.5A drain current.
Key electrical characteristics include a maximum gate charge of 145 nC at 10V and an input capacitance of 6130 pF at Vds=25V. The MOSFET can dissipate up to 357W (at Tc) and operates over a junction temperature range of -55°C to 150°C.
The FCP104N60F comes in a through-hole TO-220-3 package, making it suitable for board-level mounting in power electronics applications. The device is listed as RoHS3 compliant and has an MSL rating of 1 (unlimited) — low confidence, unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $7.19 | $7.19 |
| 10+ | $4.87 | $4.87 |
| 50+ | $3.88 | $3.88 |
| 100+ | $3.56 | $3.56 |
| 500+ | $3.10 | $3.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V
TO-220-3 through-hole package
-55°C to 150°C (junction)
Listed as RoHS3 compliant but unverified (low confidence).
145 nC maximum at 10V gate-source voltage
37A at Tc