| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,820 pcs
|
6820 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCP099N60E is an N-Channel power MOSFET manufactured by On Semiconductor. It is designed for high-voltage switching applications with a drain-source voltage rating of 600V and continuous drain current of 37A at 25°C case temperature. The device features a maximum on-resistance of 99mOhm at 18.5A gate drive of 10V, ensuring efficient power conversion. With a maximum gate charge of 114nC and input capacitance of 3465pF, it offers balanced switching performance for medium-frequency power circuits. The MOSFET is housed in a TO-220-3 through-hole package, suitable for standard PCB mounting and heatsink attachment. It operates over a junction temperature range of -55°C to 150°C and can dissipate up to 357W. This device is RoHS3 compliant and has an MSL of 1 (unlimited). Typical applications include switch-mode power supplies, power factor correction, and motor drives.
| Qty | Low | High |
|---|---|---|
| 1+ | $6.64 | $6.64 |
| 10+ | $4.48 | $4.48 |
| 50+ | $3.55 | $3.55 |
| 100+ | $3.26 | $3.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
37A at 25°C case temperature.
99mOhm at 18.5A and 10V gate drive.
TO-220-3 through-hole.
-55°C to 150°C junction temperature.
It is listed as RoHS3 compliant, but this is unverified.
Maximum 114nC at 10V.