| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,820 pcs
|
9820 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,589 pcs
|
1589 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
FCP067N65S3 is an N-channel SuperFET III power MOSFET from onsemi designed for high-voltage power conversion. It features a 650V drain-source voltage rating, 44A continuous drain current at Tc=25°C, and a maximum on-resistance of 67mΩ at Vgs=10V. The device also offers a typical gate charge of 78nC and a typical effective output capacitance of 715pF, supporting efficient switching in power supplies and inverters.
SuperFET III technology uses charge balance to achieve low on-resistance and low gate charge, helping to reduce conduction and switching losses. The device is avalanche tested and rated for single pulsed avalanche energy of 214mJ. With a maximum power dissipation of 312W and thermal resistance of 0.4°C/W junction-to-case, it is suited for demanding power applications.
FCP067N65S3 is available in a TO-220-3 through-hole package, which aids thermal management and simplifies PCB mounting. Applications include telecom/server power supplies, industrial power supplies, UPS, and solar energy systems. The device is RoHS compliant and lead-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $8.32 | $8.32 |
| 10+ | $5.68 | $5.68 |
| 50+ | $4.55 | $4.55 |
| 100+ | $4.18 | $4.18 |
| 500+ | $3.76 | $3.76 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650 V.
44 A.
67 mΩ at Vgs=10 V, Id=22 A.
TO-220-3 through-hole package.
Junction temperature range from -55°C to 150°C.
Yes, the datasheet states the device is Pb-Free and RoHS compliant.
78 nC at Vgs=10 V.