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FCMT360N65S3 The FCMT360N65S3 is a 650V N-Channel MOSFET from onsemi's SUPERFET III family, rated for 10A continuous drain current and featuring a low on-resistance of 360mOhm. It is housed in a surface-mount PQFN4 8x8 2P package.
Mfr Part #:

FCMT360N65S3

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FCMT360N65S3 is a 650V N-Channel MOSFET from onsemi's SUPERFET III family, rated for 10A continuous drain current and featuring a low on-resistance of 360mOhm. It is housed in a surface-mount PQFN4 8x8 2P package.
✓ Total Stock: 21,000 pcs
$ Price Range: $1.82 - $5.33

FCMT360N65S3 Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
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21,000 pcs
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FCMT360N65S3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FCMT360N65S3 Description

Short technical summary and product information.

The FCMT360N65S3 is a 650V N-Channel super-junction MOSFET from onsemi's SUPERFET III Easy-Drive series, designed for high-efficiency power conversion. It offers a continuous drain current of 10A at 25°C and a maximum on-resistance of 360mOhm (typical 310mOhm) at 10V gate drive.

 

Key electrical characteristics include ultra-low gate charge (18nC), low effective output capacitance (173pF), and 100% avalanche testing. The device can withstand a drain-source voltage slew rate of 100V/ns and has a peak diode recovery dv/dt of 20V/ns. The operating junction temperature range is -55°C to 150°C.

 

The MOSFET is packaged in a PQFN4 8x8 2P (CASE 483AP) surface-mount package, which is ultra-slim (1mm height) and offers low parasitic inductance thanks to separate driver and power source pins. It is Moisture Sensitivity Level 1 (MSL 1), Pb-Free, and RoHS3 compliant.

 

Typical applications include computing and display power supplies, telecom and server power supplies, industrial power supplies, and lighting/charger/adapter circuits.

FCMT360N65S3 Quick Information

Product Type: MOSFET
Series: Easy-Drive
Canonical Name: onsemi FCMT360N65S3 - 650V N-Channel MOSFET, 10A, 360mOhm, PQFN4 8x8 2P
Subcategory: N-Channel MOSFET

FCMT360N65S3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FCMT360N65S3 Estimated Pricing

Qty Low High
1+ $5.33 $5.33
10+ $3.54 $3.54
50+ $2.77 $2.77
100+ $2.52 $2.52
500+ $2.23 $2.23
3,000+ $1.82 $1.82

Estimated market price range - modelled values for guidance only, not live distributor offers.

FCMT360N65S3 Features

  • 650V drain-source voltage rating.
  • 10A continuous drain current at 25°C.
  • Low on-resistance of 360mOhm max.
  • Ultra-low gate charge of 18nC.
  • RoHS compliant and Pb-free finish.

FCMT360N65S3 Applications

  • Used in computing and display power supplies.
  • Ideal for telecom and server power supplies.
  • Suitable for industrial power supply designs.
  • Applied in lighting, charger, and adapter circuits.

FCMT360N65S3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FCMT360N65S3?

650V.

What package type is the FCMT360N65S3 available in?

PQFN4 8x8 2P (CASE 483AP), surface-mount.

What is the operating temperature range?

-55°C to 150°C (junction).

Is the FCMT360N65S3 RoHS compliant?

Yes, RoHS3 compliant and Pb-Free.

What is the continuous drain current at 100°C?

6A.

What is the gate threshold voltage?

4.5V maximum at 200µA.

What is the typical on-resistance?

310mOhm at 5A, 10V.

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