| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
22,339 pcs
|
22339 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCMT250N65S3 is an N-Channel power MOSFET from On Semiconductor's SUPERFET III family, utilizing charge balance technology for low on-resistance and gate charge. It is rated for a maximum drain-source voltage of 650V (700V at Tj=150°C) and continuous drain current of 12A at Tc=25°C.
Typical on-resistance is 210mΩ, with a maximum of 250mΩ at 10V gate drive. Gate charge is typically 24nC, and effective output capacitance is 248pF. The device is 100% avalanche tested, with single-pulse avalanche energy rating of 57mJ.
The MOSFET is offered in a 4-PowerTSFN package (Power88), an ultra-slim surface-mount package with low profile (1mm height) and small footprint (8x8mm). It features separate power and drive source pins to reduce parasitic inductance. Moisture sensitivity level is MSL 1.
Typical applications include telecom/server power supplies, industrial power supplies, UPS/solar inverters, and lighting/charger/adapters. The device is Pb-free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.73 | $5.73 |
| 10+ | $3.82 | $3.82 |
| 50+ | $3.00 | $3.00 |
| 100+ | $2.73 | $2.73 |
| 500+ | $2.46 | $2.46 |
| 3,000+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V (700V at Tj=150°C).
4-PowerTSFN (Power88) surface-mount package.
-55°C to 150°C (junction temperature).
Yes, RoHS3 compliant and Pb-free.
210mΩ typical, 250mΩ maximum at 10V gate drive.
24nC typical at 10V.