FCMT199N60 N-Channel MOSFET with 600V drain-source voltage, 20.2A continuous drain current, and 199mOhm maximum on-resistance in a surface-mount Power88 package.
Mfr Part #:

FCMT199N60

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 600V drain-source voltage, 20.2A continuous drain current, and 199mOhm maximum on-resistance in a surface-mount Power88 package.
✓ Total Stock: 1,000 pcs
$ Price Range: $2.82 - $7.49

FCMT199N60 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

FCMT199N60 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FCMT199N60 Description

Short technical summary and product information.

The On Semiconductor FCMT199N60 is an N-Channel power MOSFET featuring a drain-to-source voltage (Vdss) of 600V and a continuous drain current of 20.2A at case temperature Tc.

 

Key electrical characteristics include a maximum on-resistance of 199mOhm at 10A gate drive, a total gate charge of 74nC at Vgs=10V, and an input capacitance of 2950pF at Vds=100V. The threshold voltage is 3.5V maximum at Id=250µA, with an operating junction temperature range of -55°C to 150°C.

 

This MOSFET is suitable for high-voltage switching applications such as power supplies, adapters, and lighting ballasts. It is housed in a surface-mount 4-PowerTSFN package (Supplier Device Package: Power88) for efficient thermal dissipation with a maximum power dissipation of 208W at Tc. The device is designed with a 10V drive voltage for optimized Rds(on).

FCMT199N60 Quick Information

Product Type: MOSFET
Series: SuperFET II
Canonical Name: On Semiconductor FCMT199N60 N-Channel MOSFET
Subcategory: Power MOSFET

FCMT199N60 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FCMT199N60 Estimated Pricing

Qty Low High
1+ $7.49 $7.49
10+ $5.04 $5.04
50+ $3.99 $3.99
100+ $3.65 $3.65
500+ $3.25 $3.25
3,000+ $2.82 $2.82

Estimated market price range - modelled values for guidance only, not live distributor offers.

FCMT199N60 Features

  • N-Channel 600V power MOSFET.
  • 20.2A continuous drain current rating.
  • Low on-resistance 199mOhm at 10V drive.
  • Surface-mount 4-PowerTSFN Power88 package.
  • Wide operating temperature -55°C to 150°C.

FCMT199N60 Applications

  • Used in high-voltage power supply circuits.
  • Suitable for AC-DC adapter designs.
  • Ideal for LED lighting ballasts.
  • Applicable in switching regulator stages.

FCMT199N60 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FCMT199N60?

The maximum drain-source voltage (Vdss) is 600V.

What is the maximum continuous drain current?

The maximum continuous drain current is 20.2A at case temperature Tc.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 199mOhm at Id=10A with Vgs=10V.

What package does the FCMT199N60 use?

It comes in a 4-PowerTSFN surface-mount package with supplier device package Power88.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

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