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FCMT125N65S3 N-Channel MOSFET, 650V drain-source voltage, 24A continuous current. Low on-resistance of 125mΩ max and ultra low gate charge of 49nC.
Mfr Part #:

FCMT125N65S3

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET, 650V drain-source voltage, 24A continuous current. Low on-resistance of 125mΩ max and ultra low gate charge of 49nC.
✓ Total Stock: 61,000 pcs
$ Price Range: $2.92 - $8.05

FCMT125N65S3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
60,000 pcs
On Request
60000 pcs On Request 1 On Request On Request On Request On Request On Request
Braun Electronic Components ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FCMT125N65S3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FCMT125N65S3 Description

Short technical summary and product information.

The FCMT125N65S3 is a high-voltage N-Channel MOSFET from On Semiconductor's SUPERFET III series. It features a drain-source voltage rating of 650V (700V at Tj=150°C) and continuous drain current of 24A at 25°C (15A at 100°C).

 

The device offers ultra low gate charge (typical 49nC) and low effective output capacitance (typical 406pF), enabling efficient high-frequency switching. The maximum Rds(on) is 125mΩ at 10V gate drive, with typical value of 100mΩ.

 

Housed in a surface-mount 4-PQFN (8x8mm) package (Power88), it provides low profile and excellent thermal performance with junction-to-case thermal resistance of 0.69°C/W. Suitable for telecom/server power supplies, industrial power supplies, UPS, and solar inverters.

FCMT125N65S3 Quick Information

Product Type: N-Channel MOSFET
Series: SUPERFET III
Canonical Name: On Semiconductor FCMT125N65S3 N-Channel MOSFET, 650V, 24A, 4-PQFN
Subcategory: N-Channel MOSFET

FCMT125N65S3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

FCMT125N65S3 Estimated Pricing

Qty Low High
1+ $8.05 $8.05
10+ $5.44 $5.44
50+ $4.32 $4.32
100+ $3.96 $3.96
500+ $3.58 $3.58
3,000+ $2.92 $2.92

Estimated market price range - modelled values for guidance only, not live distributor offers.

FCMT125N65S3 Features

  • 650V drain-source breakdown voltage.
  • Continuous drain current up to 24A.
  • Low typical on-resistance of 100 mΩ.
  • Ultra low gate charge of 49 nC.
  • Low effective output capacitance 406 pF.

FCMT125N65S3 Applications

  • Ideal for telecom and server power supplies.
  • Used in industrial power supplies.
  • Suitable for UPS and solar inverter systems.

FCMT125N65S3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FCMT125N65S3?

650 V (700 V at junction temperature 150°C).

What package does the FCMT125N65S3 use?

Surface mount 4-PQFN (8x8 mm) also known as Power88 package.

What is the operating temperature range?

Junction temperature range -55°C to 150°C.

Is the FCMT125N65S3 RoHS compliant?

Yes, RoHS3 compliant and Pb-free per datasheet.

What is the maximum continuous drain current?

24 A at case temperature 25°C; 15 A at 100°C. Pulsed current 60 A.

What is the gate charge of this MOSFET?

Typical 49 nC at Vgs=10V.

What is the drain-source on-resistance?

Maximum 125 mΩ at Vgs=10V, Id=24A. Typical 100 mΩ.

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